description t he pd5702t u is a silicon laterally diffused (ld) mosfet ic designed for use as pow er amplifier 1.9 ghz phs and 2.4 ghz applications. t h is ic cons ists of tw o stage amplifiers. t he devic e is packaged in surface mount 8 pin l2mm (lead less mini mold) plastic package. features ? output pow e r : p out = + 21 dbm min. @p in = ? 5 dbm, f = 1.9 ghz, v ds = 3.0 v : p out = + 21 dbm min. @p in = +2 dbm, f = 2.45 ghz, v ds = 3.0 v ? single supply voltage : v ds = 3.0 v t yp. ? packaged in 8-pin lead-less minimold (2.0 x 2.2 x 0.5mm) suitable for high-dens ity surface mounting. applications ? 1.9 ghz applications (example : phs etc.) ? 2.4 ghz applications (example : w i reless lan etc.) ordering information (pb-free) part number package marking supply i ng form pd5702tu-e2-a 8-pin l ead-less minimold 5702 ? 8 mm w i de embossed taping ? pin 5, 6, 7, 8 indicates pull-out direction of tape ? q t y 5 kpcs/r eel remark t o order evaluation samples, contact y our nearby sales office. part number for sample order: pd5702t u-a caution observe precautions when handling because these devices are sensitive to electrostatic discharge. document no. pu10455ej01v0ds (1st edition) date published nov e mber 2003 cp(k) ? nec compound semiconductor devices 2003 si ldmosfet analog rf integrated circuit pd5702tu 3v operation silicon ldmosfet rf power amplifier integrated circuit for 1.9 ghz phs and 2.4 ghz applications
pin connection and internal block diagram (top view) 1 2 3 4 8 7 6 5 p out2 p out2 gnd p in1 gnd p in2 p in2 p out1 q2 q1 preliminary data sheet pu10455ej01v0ds 2 pd5702tu
absolute maximum ratings parameter symbol test conditions ratings unit drain to source voltage v ds t a = +25 c 8.0 v gate to source voltage v gs t a = +25 c 8.0 v drain current of q1 i ds1 t a = +25 c 45 ma drain current of q2 i ds2 t a = +25 c 259 ma total power dissipation p d t a = +85 c note 4.33 w channel temperature t ch 150 c storage temperature t stg ? 65 to +150 c operating ambient temperature t a ? 40 to +85 c maximum input power to q1 p in1 t a = +25 c 6 dbm maximum input power to q2 p in2 t a = +25 c 16 dbm note mounted on 33 21 mm epoxy glass pwb recommended operating range parameter symbol test conditions min. typ. max. unit drain to source voltage v ds t a = +25 c 2.7 3.0 3.5 v gate to source voltage v gs t a = +25 c 0 2.0 2.5 v maximum input power to q1 p in1 v ds = 3v, t a = +25 c 2.0 5.0 dbm maximum input power to q2 p in2 v ds = 3v, t a = +25 c 11.0 15.0 dbm electrical characteristics (f = 1.9 ghz, v ds = 3.0 v, t a = +25 c, unless otherwise specified, using our standard test fixture.) parameter symbol test conditions min. typ. max. unit gate to source voltage v gs 1.0 1.9 2.5 v power added efficiency pae p in = ? 5 dbm p out = +21.0 dbm ? 28.0 ? % drain current i ds note ? 155 230 ma input return loss irl p in = ? 20 dbm ? 10 ? db output return loss orl ? 8 ? db output power p out p in = ? 5 dbm 21.0 ? ? dbm power gain g p 26.0 ? ? db linear gain g l p in = ? 20 dbm ? 26.5 ? db adjacent channel power leakage 1 p adj1 p in = ? 5 dbm, ? 600 khz ? ? 60.0 ? 55.0 dbc adjacent channel power leakage 2 p adj2 p in = ? 5 dbm, ? 900 khz ? ? 70.0 ? 60 dbc occupied band width obw p in = ? 5 dbm ? 250 ? khz note i ds is total drain currents of q1 and q2 part. preliminary data sheet pu10455ej01v0ds 3 pd5702tu
electrical characteristics (f = 2.4 ghz, t a = +25 c, unless otherwise specified, using our standard test fixture.) parameter symbol test conditions min. typ. max. unit v ds = 3.3 v gate to source voltage v gs ? 1.9 ? v power added efficiency pae p in = +2 dbm p out = +22.0 dbm ? 28.0 ? % drain current i ds note ? 180 ? ma input return loss irl p in = ? 20 dbm ? 10 ? db output return loss orl ? 10 ? db output power p out p in = +2 dbm 22.0 ? ? dbm power gain g p 20.0 ? ? db v ds = 3.0 v gate to source voltage v gs ? 1.9 ? v power added efficiency pae p in = +2 dbm p out = +21.0 dbm ? 27.5 ? % drain current i ds note ? 150 ? ma input return loss irl p in = ? 20 dbm ? 10 ? db output return loss orl ? 10 ? db output power p out p in = +2 dbm 21.0 ? ? dbm power gain g p 19.0 ? ? db note i ds is total drain currents of q1 and q2 part. dc characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit q1 on-state resistance1 r on1 v ds = 0.1 v, v gs = 6 v ? 4.35 ? ? drain to source breakdown voltage1 bv dss1 i ds = 1.4 a 10.0 ? ? v gate to source breakdown voltage1 bv gss1 i gs = 1.4 a 4.0 ? ? v gate threshold voltage1 v th1 v ds = 3.5 v, i ds = 1.4 ma 1.15 1.40 1.65 v transconductance1 g m1 v ds = 3.5 v, i ds = 25 ma 50 70 ? ms q2 on-state resistance2 r on2 v ds = 0.1 v, v gs = 6 v ? 1.02 ? ? drain to source breakdown voltage2 bv dss2 i ds = 8.0 a 10.0 ? ? v gate to source breakdown voltage2 bv gss2 i gs = 8.0 a 4.0 ? ? v gate threshold voltage2 v th2 v ds = 3.5 v, i ds = 8.0 ma 1.15 1.40 1.65 v transconductance2 g m2 v ds = 3.5 v, i ds = 150 ma 290 370 ? ms preliminary data sheet pu10455ej01v0ds 4 pd5702tu
typical characteristics (prelim inary ) (f = 1.9 ghz, v ds = 3 v , v gs = 2 v , t a = +25 c, unless otherw ise specified) 35 30 25 20 15 10 ?5 ?10 ?5 ?15 0 5 10 output power p out (dbm) input power p in (dbm) output power vs. input power 5 0 0 ?10 ?20 ?30 ?40 ?70 ?80 ?10 ?5 ?15 10 0 5 p adj1 (+600 khz) p adj1 ( ? 600 khz) p adj2 (+900 khz) p adj2 ( ? 900 khz) ?50 ?60 adjacent channel power leakage p adj (dbc) input power p in (dbm) p adj vs. input power 35 30 25 20 15 10 ?5 ?10 ?5 ?15 0 5 10 power gain g p (db) input power p in (dbm) power gain vs. input power 5 0 250 200 150 0 ?10 ?5 ?15 10 0 5 100 50 drain current i ds (ma) input power p in (dbm) drain current vs. input power remark t he graphs indicate nominal characteristics. preliminary data sheet pu10455ej01v0ds 5 pd5702tu
adjacent channel power (f = 1.9 ghz, v ds = 3 v , p in = ? 5 dbm, t a = +25 c, unless otherw ise specified) atten 20 db rl 5.0 dbm mkr ?71.17 db 600 khz span 2.000 mhz swp 10.0 s center 1.900 ghz rbw 1.0 khz vbw 3.0 khz d 10 db/ remark t he graphs indicate nominal characteristics. preliminary data sheet pu10455ej01v0ds 6 pd5702tu
typical characteristics (prelim inary ) (f = 2.4 ghz, v ds = 3 v , v gs = 2 v , t a = +25 c, unless otherw ise specified) 35 30 25 20 15 10 ?5 ?10 ?5 ?15 0 5 10 output power p out (dbm) input power p in (dbm) output power vs. input power 5 0 35 30 25 20 15 10 ?5 ?10 ?5 ?15 0 5 10 power gain g p (db) input power p in (dbm) power gain vs. input power 5 0 250 200 150 0 ?10 ?5 ?15 10 0 5 100 50 drain current i ds (ma) input power p in (dbm) drain current vs. input power remark t he graphs indicate nominal characteristics. preliminary data sheet pu10455ej01v0ds 7 pd5702tu
package dimensions 8-pin lead-less minimold (unit: mm) 5702 12 3 4 8 7 6 5 4 3 2 1 56 7 8 2.2 2.0 0.1 0.5 2.0 0.4 0.4 1.4 0.75 0.75 0.25 0.25 0.16 (bottom view) (top view) preliminary data sheet pu10455ej01v0ds 8 pd5702tu
recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other t han those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ir260 vps peak temperature (package surface temperature) : 215 c or below time at temperature of 200 c or higher : 25 to 40 seconds preheating time at 120 to 150 c : 30 to 60 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below vp215 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering met hods together (except for partial heating). preliminary data sheet pu10455ej01v0ds 9 pd5702tu
4590 p a t r ick hen r y drive san t a c l ara, ca 9505 4- 181 7 teleph o n e : ( 408) 919- 25 00 facsim ile: ( 408 ) 988- 027 9 subject: compliance with eu dire ctives cel certifies, to its kno w ledge, that semicondu ctor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electron ic equipment (rohs) an d the requir e ments of eu directive 2003/11/ec restriction o n penta and octa bde. cel pb-free products ha ve the same base part n u mber with a suffix added. the suffix ?a indicates that the device is pb-fre e. the ?az suffix is use d to designa te devices containing pb which are exempted from the requirement of ro hs directive (*). in all cases the de vices have pb-free terminals. all devices with these suffixes meet the require ments of the rohs directive. this statu s is based on cel?s understanding of t he eu directives and kn owledge of the materials that go into its pr oducts as of the date of disclo s ure o f this inform ation. re st rict e d s u bst a n c e per rohs con c e n tratio n limit per rohs (value s are n o t yet fixed) con c e n tratio n contai ned in cel devices - a - a z lead (p b) < 100 0 ppm not dete cted (*) mercury < 100 0 ppm not dete cted cadmi u m < 100 ppm not dete cted hexavale nt chromi um < 100 0 ppm not dete cted pbb < 1000 ppm not detec t ed pbde < 1000 ppm not detec t ed if you should have any additional q uestions reg a rding our d e vices and compliance t o environme n tal standards, p l ease do not hesitate to contact your local representative. important inf o rm ation and disclaimer: infor m ation provided b y cel on its w ebsite or in other communi cations concertin g the subs tance content of its pro ducts represents know ledge and b e lief as of t he date that it is provided. cel bases its know ledge a n d belief on informa t ion provided b y t h ird parties and make s no representa t ion or w a rran t y a s to the accurac y of such information. efforts are u nder w a y to b e tte r integrate informa t ion from third pa rties. cel has ta ken and cont inue s to take reasona ble steps to provide repr esentative and ac cur a te information but ma y not h a ve conducted destructive testing or chemical analy s is on incoming ma terials and chemicals. cel and ce l suppliers consid er certain inform ation to be pro p ri etar y , and thus c as numbers and other limited information ma y not be availab le for release. in no event shall cel?s liability ari s ing out of such information e x cee d the total purch ase price of the cel part ( s) at issue s old by cel to customer on an annual basis. see cel te rms and conditions f o r additional cl arification of w a rran t ies and liability .
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